Title :
A GaAs monolithic pin SPDT switch for 2-18 GHz applications
Author :
Payne, D. ; Bartle, D.C. ; Bandla, S. ; Tayrani, R. ; Raffaelli, L.
Author_Institution :
Alpha Ind., Woburn, MA, USA
Abstract :
A GaAs monolithic SPDT (single-pole, double-throw) switch employing vertical epitaxial p-i-n diodes is presented. Insertion loss and isolation were 1.3 dB maximum and 55 dB minimum, respectively, over the 2- to 18-GHz operating bandwidth. Switching speed risetimes and falltimes were 2 nS. The superior performance of the switch compared to its hybrid counterpart is due to decreased device and circuit parasitics. It surpasses other monolithic switches by virtue of the C/sub j/ and R/sub s/ values realized in the diode design. This component is amenable to large volume production and high throughput testing and has widespread applications in systems which may require T/R (transmit/receive) modules or phase shifters.<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; integrated circuit technology; p-i-n diodes; semiconductor switches; 1.3 dB; 2 ns; 2 to 18 GHz; 55 dB; GaAs; MMIC; T/R modules; circuit parasitics; falltimes; high throughput testing; insertion loss; isolation; large volume production; monolithic pin SPDT switch; monolithic switches; performance; phase shifters; risetimes; semiconductors; vertical epitaxial p-i-n diodes; Bandwidth; Circuit testing; Gallium arsenide; Insertion loss; P-i-n diodes; Production systems; Switches; Switching circuits; System testing; Throughput;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69320
