DocumentCode
1904956
Title
Integration Aspects of CoWP Capping Layers for Electromigration Enhancement
Author
Preusse, A. ; Seidel, R. ; Aubel, O. ; Nopper, M. ; Freudenberg, B. ; Schaller, M. ; Fecher, M. ; Letz, T. ; Bartsch, C. ; Ott, A. ; Friedemann, M. ; Feustel, F. ; Meyer, M.A. ; Limbecker, P.
Author_Institution
AMD Fab36 LLC & Co KG, AMD LLC & Co KG, Wilschdorfer Landstra?e 101, 01109 Dresden, Germany
fYear
2008
fDate
1-4 June 2008
Firstpage
123
Lastpage
125
Abstract
CoWP metal caps have been integrated into 65nm- and 45nm-node copper interconnects. A number of CoWP specific integration aspects have been investigated. Electrical performance, reliability and yield potential were characterized on a statistical base. Substantial progress has been made to suppress the CoWP related time-depended dielectric breakdown (TDDB) degradation making CoWP the option to solve the electromigration (EM) challenge for 32nm and beyond.
Keywords
Chemistry; Cleaning; Cobalt; Copper; Current density; Dielectrics; Electromigration; Electrons; Integrated circuit interconnections; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location
Burlingame, CA, USA
Print_ISBN
978-1-4244-1911-1
Electronic_ISBN
978-1-4244-1912-8
Type
conf
DOI
10.1109/IITC.2008.4546943
Filename
4546943
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