Title :
Investigation of the impact of CoWp self-aligned barrier deposition on the porous siOC properties after a direct CMP process
Author :
Gall, S. ; Olivier, S. ; Assou, M. ; Bernard, M. ; Haumesser, P.H. ; Jayet, C. ; Maitrejean, S. ; Hamioud, K. ; Arnal, V. ; Passemard, G.
Author_Institution :
CEA-LETI-MINATEC, 17 rue des Martyrs, F38054 Grenoble cedex 9, France, Phone +33 (0)438781942, Fax +33 (0) 438783034, Email: samuel.gall@cea.fr
Abstract :
To reduce the capacitance and mimprove the reliability of metal interconnects at the 32 nm node and beyond, a promising approach is to use a direct CMP process stopping in the porous ultra-low k material combined with a metallicself-aligned CoWP capping layer. We demonstrate on 45 nm technology node wafers, that our self-aligned barrier layer process is compatible with the direct CMP process.
Keywords :
Decision support systems; Quadratic programming; Virtual reality;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546944
