DocumentCode
1905171
Title
Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
Author
Jeong, Daekyun ; Inoue, Hiroaki ; Shinriki, Hiroshi
Author_Institution
ASM Japan, Process Development Department, 23-1, 6-chome, Nagayama, Tama-shi, Tokyo, Japan, Tel.:+81-42-337-6314 Fax:+81-42-389-7555 E-mail:daekyun.jeong@asm.com
fYear
2008
fDate
1-4 June 2008
Firstpage
156
Lastpage
158
Abstract
In this paper, a novel Ru-Ta composite seed layer is shown to improve Cu-CVD filling capability for high-aspect (≫5) vias. Cu-CVD filling capability strongly depended on Ru/Ta atomic ratios of the films. Ru/Ta atomic ratio was controlled by plasma ALD cycle number of each precursor pulses. Ru-Ta composite layer can improve Cu filling capability more than a pure Ru seed layer, thus resulting in completely Cu filling of 70 nm vias without void and seam.
Keywords
Adhesives; Atomic layer deposition; Conductivity; Filling; Hydrogen; Plasma measurements; Plasma properties; Plasma temperature; Probes; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location
Burlingame, CA, USA
Print_ISBN
978-1-4244-1911-1
Electronic_ISBN
978-1-4244-1912-8
Type
conf
DOI
10.1109/IITC.2008.4546954
Filename
4546954
Link To Document