DocumentCode
1905201
Title
A Novel Technique for the Production of Thin Devices
Author
Wilson, R. ; Gamble, H.S. ; Hudson, A.S.
Author_Institution
Institute of Advanced Microelectronics, Queen´´s University of Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH, Northern Ireland, UK.
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
157
Lastpage
160
Abstract
A technique for the processing of silicon power devices on very thin substrates is presented, Using a handle wafer - device wafer approach and silicon direct bonding. An anisotropic etch is used to formn a waffle grid in the handle wafer, which then allows rear side processing of the device wafer. Sufficient strength is provided to allow reliable 5¿m thick device wafer processing. Very fast turm ON thyristor based devices have been made using this approach.
Keywords
Board of Directors; Circuits; Diodes; Etching; Explosion protection; Microelectronics; Production; Silicon; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435195
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