• DocumentCode
    1905243
  • Title

    Impact ionization phenomena in AlGaAs/GaAs HBTs

  • Author

    Di Carlo, A. ; Lugli, P. ; Pavan, P. ; Zanoni, E. ; Malik, R.

  • Author_Institution
    Schottky Institut and Physik Department, Technische Universitÿt Mÿnchen, Am Coulombwall, D-8046 Garching. Germany
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    135
  • Lastpage
    138
  • Abstract
    Ionization phenomena in AlGaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.
  • Keywords
    Charge carrier processes; Electrons; Extraterrestrial phenomena; Gallium arsenide; Heterojunction bipolar transistors; Impact ionization; Kirk field collapse effect; Microelectronics; Microwave devices; Monte Carlo methods;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435198
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1905243