DocumentCode
1905266
Title
Impact of LER and misaligned vias on the electric field in nanometer-scale wires
Author
Stucchi, Michele ; Tokei, Zsolt
Author_Institution
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium, Tel.: +32-16-281681; Fax: +32-16-281576; e-mail: stucchi@imec.be
fYear
2008
fDate
1-4 June 2008
Firstpage
174
Lastpage
176
Abstract
Electric field enhancement due to LER and misaligned vias is analyzed, modeled and quantified in nanometer-scale wires. For LER, the statistical and wirelength-dependent impact of field enhancement on dielectric breakdown is analyzed and compared with experimental results on wire test structures.
Keywords
Dielectric breakdown; Electric resistance; Electronic mail; Etching; Lithography; Predictive models; Probability; Testing; Voltage; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location
Burlingame, CA, USA
Print_ISBN
978-1-4244-1911-1
Electronic_ISBN
978-1-4244-1912-8
Type
conf
DOI
10.1109/IITC.2008.4546959
Filename
4546959
Link To Document