• DocumentCode
    1905319
  • Title

    The Permeable Junction Base Transistor with a new Gate of extremely high doped p++ - GaAs

  • Author

    Gräber, J. ; Kamp, M. ; Mörsch, G. ; Meyer, Roland ; Hardtdegen, H. ; Lüth, H.

  • Author_Institution
    Institut fÿr Schicht- und Ionentechnik (ISI), Forschungszentrum Jÿlich GmbH, Postfach 1913, D-5170 Jÿlich, FRG
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    131
  • Lastpage
    134
  • Abstract
    The Permeable Junction Base Transistor (PJBT) is a new concept of vertical field effect transistor (v-FET) that has the potential of very high frequency operation. The gate of the new homoepitaxial device consists of heavily p-type doped GaAs and is embedded in nominally undoped layers to reduce the gate capacitance. Design and technology are described and preliminary results are presented.
  • Keywords
    Capacitance; Contact resistance; Doping; FETs; Frequency; Gallium arsenide; Gratings; Schottky gate field effect transistors; Surface resistance; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435201
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1905319