DocumentCode
1905473
Title
Laser Crystallised Poly-Si TFTs
Author
Brotherton, S.D. ; McCulloch, D J ; Gowers, J.P. ; Gill, A
Author_Institution
Philips Research Laboratories, Cross Oak Lane, Redhill, Surrey, RHI 5HA
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
101
Lastpage
104
Abstract
Layers of ¿Si:H have been crystallised into poly-Si using a pulsed KrF excimer laser. Examination of the these layers by cross-sectional TEM has revealed a vertically stratified microstructure, with a large grain surface region crystallising from the molten phase. TFT behaviour correlated with both the thickness of this large grain region and the duration of the molten phase. With appropriate irradiation conditions, high quality TFTs have been fabricated on glass substrates with on:off current ratios of 108 and electron field effect mobilities up to 160cm2/Vs.
Keywords
Crystal microstructure; Crystallization; Energy measurement; Gas lasers; Laser theory; Liquid crystals; Optical pulses; Pulsed laser deposition; Temperature; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435207
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