Title :
Physics and modelling of polysilicon TFTs
Author_Institution :
Cambridge University, Department of Engineering, Cambridge, UK; GEC -Marconi Hirst Research Centre, Wembley, Middlesex, UK
Abstract :
Some key aspects of polysilicon thin film transistor physics and modelling are reviewed. A new model is discussed which can be easily implemented in circuit simulation. The theory provides a new tool for the analysis of the conduction mechanisms in thin film transistors.
Keywords :
Analytical models; Chemical lasers; Circuit simulation; Displays; Microelectronics; Physics; Temperature; Thin film transistors; Threshold voltage; Throughput;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
