DocumentCode
1905511
Title
Physics and modelling of polysilicon TFTs
Author
Migliorato, P.
Author_Institution
Cambridge University, Department of Engineering, Cambridge, UK; GEC -Marconi Hirst Research Centre, Wembley, Middlesex, UK
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
89
Lastpage
96
Abstract
Some key aspects of polysilicon thin film transistor physics and modelling are reviewed. A new model is discussed which can be easily implemented in circuit simulation. The theory provides a new tool for the analysis of the conduction mechanisms in thin film transistors.
Keywords
Analytical models; Chemical lasers; Circuit simulation; Displays; Microelectronics; Physics; Temperature; Thin film transistors; Threshold voltage; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435209
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