• DocumentCode
    1905587
  • Title

    Phase Change Memory

  • Author

    Breitwisch, Matthew J.

  • Author_Institution
    IBM/Macronix PCRAM Joint Project, IBM T J Watson Research Center, Yorktown Heights, New York, USA, phone: 1-914-945-2348; email: breitm@us.ibm.com
  • fYear
    2008
  • fDate
    1-4 June 2008
  • Firstpage
    219
  • Lastpage
    221
  • Abstract
    This paper will give an introduction to the emerging technology of Phase Change Memory (PCM) and review the state of the art, focusing on basic phase change material properties, critical PCM device characteristics, PCM device scaling, reliability issues, and processing challenges.
  • Keywords
    Amorphous materials; Amorphous semiconductors; Crystallization; Electrodes; Nonvolatile memory; Phase change materials; Phase change memory; Phase change random access memory; Resistors; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2008. IITC 2008. International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    978-1-4244-1911-1
  • Electronic_ISBN
    978-1-4244-1912-8
  • Type

    conf

  • DOI
    10.1109/IITC.2008.4546972
  • Filename
    4546972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1905587