DocumentCode
1905623
Title
Quantitative analysis of correlation between insulator surface copper contamination and TDDB lifetime based on actual measurement
Author
Oshida, D. ; Takewaki, T. ; Iguchi, M. ; Taiji, T. ; Morita, T. ; Tsuchiya, Y. ; Tsuchiya, H. ; Yokogawa, S. ; Kunishima, H. ; Aizawa, H. ; Okada, N.
Author_Institution
NEC Electronics Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan, E-mail : daisuke.oshida@necel.com
fYear
2008
fDate
1-4 June 2008
Firstpage
222
Lastpage
224
Abstract
We have analyzed the correlation between insulator surface copper contamination and time-dependent dielectric breakdown (TDDB) quantitatively for the first time. TDDB lifetime strongly depends on the copper contamination after CMP process, and it is important to control the redox potential to be less than -0.5 V vs. NHE and to utilize a chelating agent on cleaning sequence. Furthermore, we have successfully optimized the post-CMP sequence to decrease the size of antioxidant-copper complex, and improved the TDDB lifetime.
Keywords
Cleaning; Copper; Dielectrics; Insulation; Integrated circuit interconnections; Lifetime estimation; Lithography; Pollution measurement; Surface contamination; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location
Burlingame, CA, USA
Print_ISBN
978-1-4244-1911-1
Electronic_ISBN
978-1-4244-1912-8
Type
conf
DOI
10.1109/IITC.2008.4546973
Filename
4546973
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