Title :
Quantitative analysis of correlation between insulator surface copper contamination and TDDB lifetime based on actual measurement
Author :
Oshida, D. ; Takewaki, T. ; Iguchi, M. ; Taiji, T. ; Morita, T. ; Tsuchiya, Y. ; Tsuchiya, H. ; Yokogawa, S. ; Kunishima, H. ; Aizawa, H. ; Okada, N.
Author_Institution :
NEC Electronics Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan, E-mail : daisuke.oshida@necel.com
Abstract :
We have analyzed the correlation between insulator surface copper contamination and time-dependent dielectric breakdown (TDDB) quantitatively for the first time. TDDB lifetime strongly depends on the copper contamination after CMP process, and it is important to control the redox potential to be less than -0.5 V vs. NHE and to utilize a chelating agent on cleaning sequence. Furthermore, we have successfully optimized the post-CMP sequence to decrease the size of antioxidant-copper complex, and improved the TDDB lifetime.
Keywords :
Cleaning; Copper; Dielectrics; Insulation; Integrated circuit interconnections; Lifetime estimation; Lithography; Pollution measurement; Surface contamination; Surface treatment;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546973
