• DocumentCode
    1905768
  • Title

    Numerical Analysis of InP-JFET by Use of a Quasi 2D-Model

  • Author

    Brockerhoff, W. ; Ellrodt, P. ; Guldner, W. ; Heime, K. ; Tegude, F.J.

  • Author_Institution
    Duisburg University, Department of Solid State Electronics, Sonderforschungsbereich 254, Kommandantenstr. 60, D-4100 Duisburg 1
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    39
  • Lastpage
    42
  • Abstract
    The electrical performance of InP JFET in dependence on transport properties and technological parameters were investigated in detail by use of a quasi two-dimensional model including nonstationary transport effects. The analysis is carried out for gate lengths between 4¿m and 0.4¿m. The results were compared with experimental data and with those of GaAs and InGaAs FET.
  • Keywords
    Doping; Effective mass; Electron mobility; FETs; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Numerical analysis; Semiconductor process modeling; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1905768