Optically induced waveguiding in semiconductor optical amplifiers

Author

Kutsche, C. ; LiKamWa, P. ; Loehr, J.P. ; Kaspi, R.

Author_Institution

Univ. of Central Florida, Orlando, FL, USA

fYear

1998

fDate

8-8 May 1998

Firstpage

19

Lastpage

20

Abstract

Summary form only given.Soliton waveguiding effects have been investigated in an active double heterostructure diode structure employed as a nonlinear medium. It was observed that the nonlinearities due to reverse band filling in active semiconductor amplifiers give rise to a spectral region where self-focusing takes place for photon energies very slightly below the energy corresponding to the peak of the gain. The sample consisted of a standard double heterojunction GaAs-AlGaAs laser diode structure.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical self-focusing; optical solitons; optical waveguide theory; semiconductor lasers; waveguide lasers; GaAs-AlGaAs; GaAs-AlGaAs laser diode structure; active double heterostructure diode structure; nonlinear medium; nonlinearities; optically induced waveguiding; photon energies; reverse band filling; self-focusing; semiconductor optical amplifiers; soliton waveguiding effects; spectral region; standard double heterojunction; Etching; Nonlinear optics; Optical arrays; Optical pumping; Optical refraction; Optical solitons; Optical waveguides; Optimized production technology; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-541-2

Type

conf

DOI

10.1109/IQEC.1998.680060

Filename

680060