An inductor-based 52-GHz 0.18 μm SiGe HBT cascode LNA with 22 dB gain

Author

Gordon, Michael ; Voinigescu, Sorin P.

Author_Institution

Toronto Univ., Ont., Canada

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

287

Lastpage

290

Abstract

A 52-GHz two-stage cascode LNA implemented in a production 0.18 μm SiGe BiCMOS process is presented. By using inductors rather than transmission lines for matching, it occupies an area of only 200 μm×250 μm. The circuit features standard 60 μm×60 μm bond pads, on-chip bias network, and consumes 11.4 mA from a 3.3 V supply. The measured S₁₁ is lower than -12 dB from 35 GHz to 65 GHz and S₂₁ exceeds 22 dB. The gain remains above 18 dB when the supply voltage and power dissipation are reduced to 2.5 V and 19.5 mW respectively.

Keywords

MIMIC; bipolar analogue integrated circuits; impedance matching; inductors; millimetre wave amplifiers; 0.18 micron; 11.4 mA; 18 dB; 19.5 mW; 2.5 V; 200 micron; 22 dB; 3.3 V; 35 to 65 GHz; 52 GHz; 60 micron; BiCMOS; HBT LNA; SiGe; bond pads; inductor-based low-noise amplifier; line inductors; matching inductors; on-chip bias network; spiral inductors; two-stage cascode LNA; BiCMOS integrated circuits; Bonding; Distributed parameter circuits; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Power transmission lines; Production; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European

Print_ISBN

0-7803-8480-6

Type

conf

DOI

10.1109/ESSCIR.2004.1356674

Filename

1356674