A high efficiency, 2 V single-supply voltage operation RF front-end MMIC for 1.9 GHz Personal Handy Phone Systems

Author

Choumei, K. ; Yamamoto, K. ; Kasai, N. ; Moriwaki, T. ; Yoshii, Y. ; Fujii, T. ; Otsuji, J. ; Miyazaki, Y. ; Tanino, N. ; Sato, K.

Author_Institution

High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

73

Lastpage

76

Abstract

A high efficiency and very low voltage operation MMIC using planar self-aligned gate (SAG) FET has been developed for the 1.9 GHz Japanese Personal Handy Phone System (PHS). The MMIC integrates a power amplifier (PA), a low noise amplifier (LNA), a T/R switch (SW) and a negative voltage generator (NVG). The MMIC exhibited high power added efficiency of 39% at the output power (Pout) of 21.0 dBm, which is the highest efficiency in the 2.0 V single supply voltage operation RF front-end MMIC ever reported.

Keywords

III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; cellular radio; field effect MMIC; gallium arsenide; personal communication networks; radio equipment; 1.9 GHz; 2 V; 39 percent; Japanese PHS; LNA; Personal Handy Phone System; RF front-end MMIC; T/R switch; high efficiency; low noise amplifier; low voltage operation; negative voltage generator; planar SAG FET; planar self-aligned gate FET; power amplifier; single-supply voltage operation; FETs; Low voltage; Low-noise amplifiers; MMICs; Noise generators; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722631

Filename

722631