Title :
Characterization and Matching Analysis of 50 nm-NMOS-Transistors
Author :
Horstmann, J.T. ; Hilleringmann, U. ; Goser, K.
Author_Institution :
Faculty of Electrical Engineering, University of Dortmund, Emil-Figge-Str. 68, D 44221 Dortmund, Germany, e-mail: horstman@luzi.e-technik.uni-dortmund.de
Abstract :
NMOS-transistors with a gate length down to 50 nm are fabricated by conventional optical lithography using a deposition and etchback technique. The local matching of the transistors is examined and compared to simulations. Finally the validity of the law of area (¿VT ¿ 1/ ¿W·L) for sub-100 nm-transistors will be discussed.
Keywords :
Atomic measurements; Circuit analysis; Digital circuits; Etching; Fluctuations; Geometry; Optical films; Resists; Threshold voltage; X-ray lithography;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
