DocumentCode
1906210
Title
Optimization of Hetero-FET Alloy Composition for Low Noise Applications in Millimeter-Wave Frequency Range
Author
Abou-Elnour, Ali ; Schunemann, Klaus
Author_Institution
Technische Universitÿt Hamburg-Harburg, Arbeitsbereich Hochfrequenztechnik, 21071 Hamburg, Germany. e-mail: abo-elnour@tu-harburg.d400.de
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
259
Lastpage
262
Abstract
The noise behavior of subquarter micrometer gate-length Hetero-FETs is investigated by using a rigorous two-dimensional physical simulator. The influence of device structure and operating conditions on the carrier transport inside the device and consequently on its noise performance is explained by making use of the microscopic nature of the model. The model is applied to study the effects of alloy composition and the resulting band discontinuity on the 2DEG properties and on the noise performance of Hetero-FETs at millimeter-wave frequencies, and to extract the optimum alloy composition which leads to minimum noise figure in different frequency ranges.
Keywords
Aluminum alloys; FETs; Fluctuations; Frequency; Gallium arsenide; Lead; Noise figure; Quantization; Scattering; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435237
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