On-chip versus off-chip passives in multi-band radio design

Author

Duo, Xinzhong ; Torikka, Tommi ; Zheng, Li-Rong ; Ismail, Mohammed ; Tenhunen, Hannu

Author_Institution

Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista-Stockholm, Sweden

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

327

Lastpage

330

Abstract

This paper presents on-chip versus off-chip passives in multi-band radio design. The analysis is demonstrated through several multi-band low noise amplifiers designs in SiGe BiCMOS and GaAs PHEMT. Cost-performance trade-off analysis shows that when on-chip passives are moved off chip, performance of RF circuits is always improved. However, simple RF circuits do not show obvious cost-benefits, whereas complex RF circuits such as multi-band radio can have significant cost savings by using off-chip passives.

Keywords

BiCMOS analogue integrated circuits; Bluetooth; HEMT integrated circuits; cost-benefit analysis; microwave amplifiers; wideband amplifiers; wireless LAN; 2.4 GHz; 5 GHz; 5.2 GHz; BiCMOS; Bluetooth; GaAs; PHEMT; RF circuit performance; SiGe; WLAN; cost-performance trade-off analysis; multiband low noise amplifiers; multiband radio; off-chip passives; on-chip passives; wide band LNA; BiCMOS integrated circuits; Circuit noise; Gallium arsenide; Germanium silicon alloys; Low-noise amplifiers; PHEMTs; Performance analysis; Radio frequency; Radiofrequency amplifiers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European

Print_ISBN

0-7803-8480-6

Type

conf

DOI

10.1109/ESSCIR.2004.1356684

Filename

1356684