Title :
Laser beam carrier injection technique for CMOS LSI failure analysis using an OBIC: light-induced state transition (LIST) method
Author :
Kohno, Yoshiteru ; Shimizu, Masao ; Kitamura, Kohji ; Nishikawa, Atsushi ; Odani, Chiyo ; Miura, Nobuhito
Author_Institution :
Yasu Semicond. Oper., IBM Japan Ltd., Shiga-ken, Japan
Abstract :
This paper describes a new technique, called the Light-Induced State Transition (LIST) method that uses an optical beam induced current (OBIC) system for failure analysis of CMOS LSIs. This technique allows one to locate a low signal line short-circuited to a GND bus (or a high signal line short-circuited to a VDD bus) in stand-by condition which is not possible with conventional failure analysis techniques such as photo-emission analysis, liquid crystal technique, or the conventional OBIC method. The effectiveness of the LIST method was verified by an experiment on inverter chains that included quasi-failures intentionally patched by FIB deposition. The LIST method has also been used for actual CMOS logic failure analysis, and has proved to be useful for finding a failure location rapidly
Keywords :
CMOS logic circuits; OBIC; failure analysis; fault location; integrated circuit reliability; integrated circuit testing; large scale integration; laser beam applications; logic testing; CMOS LSI failure analysis; LIST method; OBIC system; failure location; laser beam carrier injection technique; light-induced state transition method; optical beam induced current; stand-by condition; CMOS logic circuits; CMOS technology; Failure analysis; Inverters; Large scale integration; Laser beams; Laser transitions; Liquid crystals; Optical beams; Signal analysis;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3752-2
DOI :
10.1109/ISSM.1997.664592