Modelling of Gate Currents in MOSFETs Operating at Low Drain Voltages

A hybrid Monte Carloliterative technique has been used to solve the Boltzmann transport equation including electron-electron interactions. A simple parabolic energy dispersion and a full band structure are separately used to calculate the electron-electron scattering rate. The technique is used to model gate currents in MOSFETs operating at low drain voltages. It found that electron-electron scattering near the drain of the device can quantitatively account for experimental observations ofgate current at low drain voltages.