• DocumentCode
    1906521
  • Title

    Pseudomorphic Two-Dimensional Electron-Gas-Emitter Resonant Tunneling Devices

  • Author

    Brugger, H. ; Meiners, U. ; Wölk, C. ; Deufel, R. ; Marten, A. ; Rossmanith, M. ; Klitzing, K.v. ; Sauer, R.

  • Author_Institution
    Daimler Benz AG, Forschungszentrum, P.O. Box 2360, D-7900 Ulm, Germany
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    663
  • Lastpage
    666
  • Abstract
    A resonant tunneling diode with the highest room temperature peak-to-valley current ratio (PVR) in the GaAs/AlGaAs system is described. Using a pseudomorphic InGaAs quantum well for carrier injection, room temperature PVR = 7.2 and liquid nitrogen temperature PVR = 27 were obtained with a reasonable peak current density of 104A/cm2. Experiments under hydrostatic pressure give evidence that X-like states in the barriers are strongly involved in the tunneling process.
  • Keywords
    Current density; Diodes; Doping profiles; Frequency; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Resonant tunneling devices; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1906521