The importance of gate charge formulation in large-signal PHEMT modeling

Author

Mallavarpu, R. ; Teeter, D. ; Snow, M.

Author_Institution

Adv. Device Center, Raytheon Electron., Andover, MA, USA

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

87

Lastpage

90

Abstract

A critical step in developing accurate large signal PHEMT models is the equation used for the gate charge. This paper examines three types of gate charge formulations. Measured versus modeled results at 2, 8 and 16 GHz clearly demonstrate that a two terminal voltage dependent gate charge model provides the best prediction of all the parameters measured, namely : output power, PAE, drain current, harmonic power, and 3rd order intermodulation distortion products Ga.

Keywords

equivalent circuits; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; power HEMT; semiconductor device models; 2 to 16 GHz; PAE; drain current; gate charge formulation; harmonic power; intermodulation distortion products; large-signal PHEMT modeling; output power; power-added efficiency; pseudomorphic HEMT; third-order IMD products; two terminal voltage dependent gate charge model; Charge measurement; Current measurement; Distortion measurement; Equations; PHEMTs; Power generation; Power measurement; Power system harmonics; Predictive models; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722634

Filename

722634