Title :
The importance of gate charge formulation in large-signal PHEMT modeling
Author :
Mallavarpu, R. ; Teeter, D. ; Snow, M.
Author_Institution :
Adv. Device Center, Raytheon Electron., Andover, MA, USA
Abstract :
A critical step in developing accurate large signal PHEMT models is the equation used for the gate charge. This paper examines three types of gate charge formulations. Measured versus modeled results at 2, 8 and 16 GHz clearly demonstrate that a two terminal voltage dependent gate charge model provides the best prediction of all the parameters measured, namely : output power, PAE, drain current, harmonic power, and 3rd order intermodulation distortion products Ga.
Keywords :
equivalent circuits; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; power HEMT; semiconductor device models; 2 to 16 GHz; PAE; drain current; gate charge formulation; harmonic power; intermodulation distortion products; large-signal PHEMT modeling; output power; power-added efficiency; pseudomorphic HEMT; third-order IMD products; two terminal voltage dependent gate charge model; Charge measurement; Current measurement; Distortion measurement; Equations; PHEMTs; Power generation; Power measurement; Power system harmonics; Predictive models; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722634
