Single-chip 30 W CW AlGaAs/GaAs heterojunction bipolar transistor at 3 GHz

Author

Hill, D. ; Hua-Quen Tserng ; Tae Kim ; Tutt, M.

Author_Institution

Corp. Res. & Dev., Texas Instrum. Inc., Dallas, TX, USA

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

229

Lastpage

232

Abstract

We have fabricated heterojunction bipolar transistors that, to our knowledge, exhibit record operating voltage and single-chip output power for GaAs microwave power devices. A device with 720 /spl mu/m total emitter length achieved an output power of 4 W with 62% power-added efficiency at 3 GHz at a collector bias of 20 V. A device monolithically combining 16 unit cells, for a total emitter length of 7.68 mm, achieved a CW output power of 30 W with 55% power-added efficiency at 3 GHz.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 20 V; 3 GHz; 30 W; 55 percent; AlGaAs-GaAs; CW output power; microwave power device; power-added efficiency; single-chip AlGaAs/GaAs heterojunction bipolar transistor; Fabrication; Fingers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Instruments; Low voltage; Microwave devices; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567875

Filename

567875