Title :
Device Simulations for EPROM Cells Scaling Down
Author :
Bergonzoni, C. ; Camerlenghi, E. ; Caprara, P.
Author_Institution :
SGS-Thomson Microelectronics - Central R & D, v. C. Olivetti 2 - 20041 Agrate Brianza (MI) - Italy
Abstract :
A method for the analysis of EPROM cells scaling down is presented, which, by means of 2-D device simulations, allows the study of performance and reliability of scaled devices. The definition of a working area for the EPROM cell introduces a scheme for the study of bias voltages scaling down.
Keywords :
Analytical models; EPROM; Hot carrier injection; Microelectronics; Performance analysis; Reliability theory; Research and development; Solid modeling; Threshold voltage; Voltage control;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
