DocumentCode
1906834
Title
Device Simulations for EPROM Cells Scaling Down
Author
Bergonzoni, C. ; Camerlenghi, E. ; Caprara, P.
Author_Institution
SGS-Thomson Microelectronics - Central R & D, v. C. Olivetti 2 - 20041 Agrate Brianza (MI) - Italy
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
625
Lastpage
628
Abstract
A method for the analysis of EPROM cells scaling down is presented, which, by means of 2-D device simulations, allows the study of performance and reliability of scaled devices. The definition of a working area for the EPROM cell introduces a scheme for the study of bias voltages scaling down.
Keywords
Analytical models; EPROM; Hot carrier injection; Microelectronics; Performance analysis; Reliability theory; Research and development; Solid modeling; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435258
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