DocumentCode :
1906840
Title :
Compact amplifier using time gated beam sources
Author :
Nalos, E.J. ; Geren, W.P.
Author_Institution :
The Boeing Co., Seattle, WA, USA
fYear :
1993
fDate :
7-9 June 1993
Firstpage :
80
Abstract :
Summary form only given. A short pulse amplifier which uses a combination of a cold field emitting cathode and a light gated semiconducting switch to generate a gated current beam is discussed. A number of such beams interact transversely with a wideband propagating circuit, with each beam timed accurately to add energy to portions of a pulse as it travels down the circuit at its phase velocity. Peak power outputs of 1 to 20 MW are projected at voltages below 40 kV, with average powers above 1 kW for switch repetition rates of under 100 kHz.
Keywords :
microwave power amplifiers; 1 kW; 1 to 20 MW; 40 kV; average powers; cold field emitting cathode; compact amplifier; gated current beam; light gated semiconducting switch; peak power output; short pulse amplifier; switch repetition rates; time gated beam sources; transverse interaction; wideband propagating circuit; Broadband amplifiers; Cathodes; Circuits; Optical propagation; Power semiconductor switches; Pulse amplifiers; Pulse generation; Semiconductivity; Semiconductor optical amplifiers; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1993. IEEE Conference Record - Abstracts., 1993 IEEE International Conference on
Conference_Location :
Vancouver, BC, Canada
ISSN :
0730-9244
Print_ISBN :
0-7803-1360-7
Type :
conf
DOI :
10.1109/PLASMA.1993.593027
Filename :
593027
Link To Document :
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