Title :
Corrugated micromachined membrane structures
Author :
Chrusch, Dwayne D. ; Shafai, C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Manitoba Univ., Winnipeg, Man., Canada
Abstract :
Thin film copper membranes on silicon substrates were constructed using microelectronic fabrication techniques. Membranes possessed radial surface corrugation patterns. Membrane sizes ranged from 3.25 mm to 4 mm in diameter. A corrugation height of 10 μm was chosen to maximize membrane flexibility. Two corrugation pitches were used; 200 μm and 120 μm. Double-sided lithography was used to ensure proper alignment between frontside and backside features. Membranes were released using a combination of both KOH and XeF2 backside etching. Surface corrugations were made using KOH etching on the frontside of the wafer. Thin film copper was deposited using thermal evaporation. Membrane flexibility was studied as a function of diameter and corrugation pitch. Membranes were electrostatically actuated using a high voltage DC supply.
Keywords :
copper; electrostatic actuators; etching; membranes; micromachining; microsensors; microstrip components; microwave phase shifters; pressure transducers; vacuum deposition; 10 micron; 120 micron; 200 micron; 3.25 to 4 mm; Cu-Si; KOH; KOH backside etching; RF phase shifters; Si; XeF2; XeF2 backside etching; copper thermal evaporation; corrugated micromachined membrane structures; corrugation height; corrugation pitch; electrostatically actuated membranes; frontside-backside feature alignment; high voltage DC supply; membrane flexibility; membrane size; microelectronic fabrication techniques; pressure transducers; radial surface corrugation patterns; silicon substrates; surface corrugations; thin film copper membranes; wafer frontside etching; Biomembranes; Copper; Corrugated surfaces; Etching; Fabrication; Lithography; Microelectronics; Semiconductor thin films; Silicon; Substrates;
Conference_Titel :
Electrical and Computer Engineering, 2002. IEEE CCECE 2002. Canadian Conference on
Print_ISBN :
0-7803-7514-9
DOI :
10.1109/CCECE.2002.1015266