DocumentCode
1906883
Title
The High Injection MOS cell: a novel 5V-only Flash EEPROM concept with a 1 μs programming time
Author
Van Houdt, J. ; Wellekens, D. ; Groeseneken, Guido ; Deferm, L. ; Maes, H.E.
Author_Institution
IMEC v.z.w. Kapeldreef 75, B3001 Leuven, Belgium
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
617
Lastpage
620
Abstract
This novel Flash EEPROM device combines a high programming speed of the order of 1 μs at 5V-only operation with a low development entry cost, which renders it a highly attractive concept for fast nonvolatile ASIC applications.
Keywords
CMOS technology; Costs; EPROM; Hot carriers; Nonvolatile memory; Power supplies; Space technology; Split gate flash memory cells; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435260
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