DocumentCode :
1906907
Title :
On the Numerical Simulation of C-V Measurements at Isotype and Anisotpye Heterojunctions
Author :
Pittroff, W. ; Bach, H.G. ; Beister, G.
Author_Institution :
Zentral institut fÿr Optik und Spektroskopie, Rudower Chaussee 6, O-1199 Berlin, Germany
fYear :
1991
fDate :
16-19 Sept. 1991
Firstpage :
597
Lastpage :
600
Keywords :
Analytical models; Capacitance-voltage characteristics; Computational modeling; Heterojunctions; Interface states; Laboratories; Microelectronics; Numerical simulation; Schottky barriers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
Print_ISBN :
0444890661
Type :
conf
Filename :
5435261
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1906907
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