• DocumentCode
    1906958
  • Title

    Integrated Quantum Well Bipolar Devices for Tunable Detection and Optical Logic Applications

  • Author

    Bhattacharya, P. ; Singh, J. ; Goswami, S. ; Li, W-Q.

  • Author_Institution
    Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    585
  • Lastpage
    592
  • Abstract
    The properties of exciton-based quantum well devices suitable for low-power photonic switching and logic applications and wavelength selective detection will be described. The basic device is a heterojunction bipolar transistor with MQW collector region monolithically integrated with a p-i(MQW)-n modulator, realized by single-step epitaxy. The integrated controller-modulator device, by virtue of its unique photocurrent-voltage characteristics, exhibits integrating-thresholding properties. These properties have been exploited to demonstrate cascadability, fan-out, optoelectronic amplification, special logic functions, programmable optical/electronic memory capabilities, and wavelength selective detection with GaAs/AlGaAs heterostructure devices.
  • Keywords
    Epitaxial growth; Heterojunction bipolar transistors; Integrated optics; Logic devices; Logic functions; Optical detectors; Optical devices; Optical modulation; Quantum well devices; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435263