DocumentCode :
1906958
Title :
Integrated Quantum Well Bipolar Devices for Tunable Detection and Optical Logic Applications
Author :
Bhattacharya, P. ; Singh, J. ; Goswami, S. ; Li, W-Q.
Author_Institution :
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA
fYear :
1991
fDate :
16-19 Sept. 1991
Firstpage :
585
Lastpage :
592
Abstract :
The properties of exciton-based quantum well devices suitable for low-power photonic switching and logic applications and wavelength selective detection will be described. The basic device is a heterojunction bipolar transistor with MQW collector region monolithically integrated with a p-i(MQW)-n modulator, realized by single-step epitaxy. The integrated controller-modulator device, by virtue of its unique photocurrent-voltage characteristics, exhibits integrating-thresholding properties. These properties have been exploited to demonstrate cascadability, fan-out, optoelectronic amplification, special logic functions, programmable optical/electronic memory capabilities, and wavelength selective detection with GaAs/AlGaAs heterostructure devices.
Keywords :
Epitaxial growth; Heterojunction bipolar transistors; Integrated optics; Logic devices; Logic functions; Optical detectors; Optical devices; Optical modulation; Quantum well devices; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
Print_ISBN :
0444890661
Type :
conf
Filename :
5435263
Link To Document :
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