Title :
Optical characterization of strained InGaAs/InP quantum well structures
Author :
Wolter, K. ; Schwedler, R. ; Gallmann, B. ; Jaekel, Ch. ; Stollenwerk, M. ; Camassel, J. ; Laurenti, J.P. ; Juillaguet, S.
Author_Institution :
Institute of Semiconductor Electronics II, RWTH Aachen, FRG
Abstract :
The effects of strain on the optical properties of In1-xGax As/InP multiple-quantum well structures grown by low pressure metal organic vapor phase epitaxy have been investigated by photoluminescence spectroscopy. The investigated composition range is varied between 0.17 ¿ xGa ¿ 1.00. Sputtered neutrals mass spectrometry has been used to calibrate the growth interpolated nominal compositions. Distinct peaks from monolayer variations of well thickness are observed from all samples. The analysis of the PL-spectra leads to the assumption of an intermediate layer of InAs0.65P0.35 at the InP to In1=x Gax As (lower) interface.
Keywords :
Energy measurement; Fluid flow measurement; Geographic Information Systems; Indium gallium arsenide; Indium phosphide; Lattices; Mass spectroscopy; Position measurement; Temperature distribution; Thickness measurement;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
