• DocumentCode
    1906981
  • Title

    Optical characterization of strained InGaAs/InP quantum well structures

  • Author

    Wolter, K. ; Schwedler, R. ; Gallmann, B. ; Jaekel, Ch. ; Stollenwerk, M. ; Camassel, J. ; Laurenti, J.P. ; Juillaguet, S.

  • Author_Institution
    Institute of Semiconductor Electronics II, RWTH Aachen, FRG
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    593
  • Lastpage
    596
  • Abstract
    The effects of strain on the optical properties of In1-xGax As/InP multiple-quantum well structures grown by low pressure metal organic vapor phase epitaxy have been investigated by photoluminescence spectroscopy. The investigated composition range is varied between 0.17 ¿ xGa ¿ 1.00. Sputtered neutrals mass spectrometry has been used to calibrate the growth interpolated nominal compositions. Distinct peaks from monolayer variations of well thickness are observed from all samples. The analysis of the PL-spectra leads to the assumption of an intermediate layer of InAs0.65P0.35 at the InP to In1=x Gax As (lower) interface.
  • Keywords
    Energy measurement; Fluid flow measurement; Geographic Information Systems; Indium gallium arsenide; Indium phosphide; Lattices; Mass spectroscopy; Position measurement; Temperature distribution; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435264
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1906981