Scalable large-signal model for large RF power MESFETs

Author

Shirokov, M.S. ; Kriventsov, S.G. ; Bao, J. ; Hwang, J.C.M. ; Chemelli, R. ; Jones, J.R. ; de Moura, J.

Author_Institution

Lehigh Univ., Bethlehem, PA, USA

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

91

Lastpage

94

Abstract

Novel extraction and scaling procedures were developed for a commercially-available large-signal model which accurately predicted the performance of large RF power MESFETs with total gate widths on the order of cm. Most model parameters were found to be either independent of or linearly dependent on the total gate width. The only nonlinear scaling factors were attributed to higher thermal resistances of large MESFETs caused by nonuniform self heating. Modeled output waveforms and harmonic powers under class AB and B conditions were in excellent agreement with measured data.

Keywords

UHF field effect transistors; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; thermal resistance; class AB conditions; class B conditions; extraction procedure; harmonic power; large RF power MESFETs; model parameters; nonlinear scaling factors; nonuniform self heating; scalable large-signal model; scaling procedure; thermal resistances; total gate width; Capacitance; Gallium arsenide; Ion implantation; MESFETs; Mercury (metals); Radio frequency; Resistance heating; Semiconductor device modeling; Thermal resistance; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722635

Filename

722635