Title :
Effect of oxide thickness on the low-frequency noise in MOSFET-based charge transfer devices
Author :
Singh, Vipul ; Inokawa, Hiroshi ; Satoh, Hiroaki
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
Abstract :
In this paper, current noise in the charge-transfer device fabricated by 65-nm bulk CMOS process, having different gate oxide thicknesses is reported both under direct current (DC) and charge transfer (CT) mode of operations. The interface trap density in these gate oxides were also estimated using charge pumping technique. Optimized gate oxide thickness for reduced noise power in the CT operation mode was obtained.
Keywords :
CMOS integrated circuits; MOSFET; charge exchange; semiconductor device noise; CMOS process; MOSFET; charge pumping; charge transfer devices; direct current mode; gate oxide thickness; interface trap density; low-frequency noise; size 65 nm; Charge coupled devices; Charge pumps; Delay; Fluctuations; Logic gates; MOSFETs; Noise;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562539
