DocumentCode
1907024
Title
High Energy Photon Emission in GaAs MESFETs and AIGaAs/GaAs HEMTs
Author
Zanoni, E. ; Tedesco, C. ; Paccagnella, A. ; Canali, C. ; Bigliardi, S. ; Manfredi, M.
Author_Institution
Dipartimento di Elettronica e Informatica, Universita´´ di Padova, Via Gradengio 3a, 35131 Padova, Italy
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
581
Lastpage
584
Abstract
We present a detailed investigation of hot carrier induced impact ionization and light emission in submicron GaAs MESFETs and AlGaAs/GaAs HEMTs demonstrating that emission of photons with hv≫ Eg is mainly caused by recombination between channel electrons and holes generated by impact ionization.
Keywords
Character generation; Charge carrier processes; Electron emission; Gallium arsenide; HEMTs; Impact ionization; MESFETs; MODFETs; Photonics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435266
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