Fully integrated ultra wide band CMOS low noise amplifier

Author

Grewing, Christian ; Friedrich, Martin ; Puma, Giuseppe Li ; Sandner, Christoph ; Van Waasen, Stefan ; Wiesbauer, Andreas ; Winterberg, Kay

Author_Institution

Dev. Center, Infineon Technol. AG, Dusseldorf, Germany

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

435

Lastpage

438

Abstract

A single ended low noise amplifier (LNA) in distributed amplifier technique for ultra wide band (UWB) fabricated in a standard 0.13 μm CMOS technology is presented. Measurement results are given for a chip-on-board module to take possible influences of a product assembly into account. The amplifier provides 15 dB gain with a corner frequency up to 5 GHz, a noise figure of 4.5 dB to 5.5 dB at 50 Ω in this frequency range and an input 1 dB-compression point of -5 dBm.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; assembling; chip-on-board packaging; distributed amplifiers; integrated circuit design; integrated circuit measurement; integrated circuit noise; integrated circuit packaging; integrated circuit reliability; wideband amplifiers; 0.13 micron; 15 dB; 4.5 to 5.5 dB; 5 GHz; 50 ohm; LNA; UWB; amplifier measurement; chip-on-board module; corner frequency; distributed amplifier technique; frequency range; fully integrated ultra wide band CMOS low noise amplifier; gain; input compression point; noise figure; product assembly; single ended low noise amplifier; standard CMOS technology; Bandwidth; CMOS technology; Distributed amplifiers; Impedance; Low-noise amplifiers; Noise figure; Power transmission lines; Radio frequency; Semiconductor device measurement; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2004. ESSCIRC 2004. Proceeding of the 30th European

Print_ISBN

0-7803-8480-6

Type

conf

DOI

10.1109/ESSCIR.2004.1356711

Filename

1356711