Channel scaling in Si and In0.3Ga0.7As bulk MOSFETs: A Monte Carlo study

The ITRS predicts that the scaling of planar CMOS technology will continue till the 22 nm technology node and a possible extension is extremely tempting. The desire to continue the scaling of planar technology is driven by lower costs when compared to novel, non-planar technology concepts like multi-gate architectures or nanowires. However, experimental evidence suggests that carrier effective mobility and injection velocity will dramatically lower at very small gate lengths thus prohibiting the possibility of reaching the ballistic regime.