DocumentCode
1907120
Title
Performance characteristics of strongly correlated bilayer graphene for post-CMOS logic devices
Author
Dellabetta, B. ; Gilbert, M.J.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fYear
2010
fDate
13-14 June 2010
Firstpage
1
Lastpage
2
Abstract
Post-CMOS logic in bilayer graphene is very promising due to the possibility of observing room temperature collective states. We present calculations of graphene bilayers and the conditions necessary for excitonic superfluidity. At room temperature, the maximum current the condensate can support is increased over low temperature values and we can achieve negative differential resistances greater than 3 orders of magnitude between the condensate current and the non-interacting quasiparticle current which flows after exceeding the maximum current.
Keywords
CMOS logic circuits; graphene; logic devices; superfluidity; bilayer graphene; excitonic superfluidity; negative differential resistances; performance characteristics; post-CMOS logic devices; Book reviews; Critical current; Interference; Logic gates; Performance evaluation; Tunneling; graphene; logic; post-CMOS; simulation; transport;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-7727-2
Electronic_ISBN
978-1-4244-7726-5
Type
conf
DOI
10.1109/SNW.2010.5562544
Filename
5562544
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