• DocumentCode
    1907120
  • Title

    Performance characteristics of strongly correlated bilayer graphene for post-CMOS logic devices

  • Author

    Dellabetta, B. ; Gilbert, M.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
  • fYear
    2010
  • fDate
    13-14 June 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Post-CMOS logic in bilayer graphene is very promising due to the possibility of observing room temperature collective states. We present calculations of graphene bilayers and the conditions necessary for excitonic superfluidity. At room temperature, the maximum current the condensate can support is increased over low temperature values and we can achieve negative differential resistances greater than 3 orders of magnitude between the condensate current and the non-interacting quasiparticle current which flows after exceeding the maximum current.
  • Keywords
    CMOS logic circuits; graphene; logic devices; superfluidity; bilayer graphene; excitonic superfluidity; negative differential resistances; performance characteristics; post-CMOS logic devices; Book reviews; Critical current; Interference; Logic gates; Performance evaluation; Tunneling; graphene; logic; post-CMOS; simulation; transport;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2010
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-7727-2
  • Electronic_ISBN
    978-1-4244-7726-5
  • Type

    conf

  • DOI
    10.1109/SNW.2010.5562544
  • Filename
    5562544