DocumentCode :
1907132
Title :
Effects of aluminum layer and oxidation on TiO2 based bipolar resistive random access memory (RRAM)
Author :
Oh, Jeong-Hoon ; Ryoo, Kyung-Chang ; Jung, Sunghun ; Oh, Kyung Seok ; Shin, Hyungcheol ; Park, Byung-Gook
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
fYear :
2010
fDate :
13-14 June 2010
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, the effects of aluminum (Al) layer and plasma oxidation on TiO2 based bipolar RRAM cell are investigated. The switching behaviors of the several cases in Ir/TiO2/Ir structure are compared with each other from the viewpoint of the effect of inserted Al layer and plasma oxidation time.
Keywords :
aluminium; oxidation; phase change memories; switching circuits; titanium compounds; Al; TiO2; aluminum layer; bipolar RRAM cell; bipolar resistive random access memory; plasma oxidation; switching behaviors; Electrodes; Materials; Oxidation; Plasmas; Random access memory; Resistance; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
Type :
conf
DOI :
10.1109/SNW.2010.5562545
Filename :
5562545
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1907132
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