• DocumentCode
    1907132
  • Title

    Effects of aluminum layer and oxidation on TiO2 based bipolar resistive random access memory (RRAM)

  • Author

    Oh, Jeong-Hoon ; Ryoo, Kyung-Chang ; Jung, Sunghun ; Oh, Kyung Seok ; Shin, Hyungcheol ; Park, Byung-Gook

  • Author_Institution
    Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2010
  • fDate
    13-14 June 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, the effects of aluminum (Al) layer and plasma oxidation on TiO2 based bipolar RRAM cell are investigated. The switching behaviors of the several cases in Ir/TiO2/Ir structure are compared with each other from the viewpoint of the effect of inserted Al layer and plasma oxidation time.
  • Keywords
    aluminium; oxidation; phase change memories; switching circuits; titanium compounds; Al; TiO2; aluminum layer; bipolar RRAM cell; bipolar resistive random access memory; plasma oxidation; switching behaviors; Electrodes; Materials; Oxidation; Plasmas; Random access memory; Resistance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2010
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-7727-2
  • Electronic_ISBN
    978-1-4244-7726-5
  • Type

    conf

  • DOI
    10.1109/SNW.2010.5562545
  • Filename
    5562545
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1907132