DocumentCode
1907195
Title
Determination of the gate-voltage dependent series resistance and channel length in sub micron LDD-MOSFETs
Author
Otten, J.A.M. ; Klaassen, F.M.
Author_Institution
Eindhoven University of Technology. Department of Electrical Engineering, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
555
Lastpage
558
Abstract
In short channel MOSFETs the effects of series resistance become increasingly important. In this paper the limitations of two existing series resistance measurement methods [1,2] will be discussed. Because of their limitations a new measurement method will be presented for the determination of the gate voltage dependent series resistance. In addition a very useful numerical process and device simulation method to estimate the source (drain) series resistance under several bias conditions will be discussed.
Keywords
DVD; Data mining; Electric resistance; Electrical resistance measurement; Intrusion detection; Length measurement; MOSFETs; Microelectronics; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435272
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