Title :
Determination of the gate-voltage dependent series resistance and channel length in sub micron LDD-MOSFETs
Author :
Otten, J.A.M. ; Klaassen, F.M.
Author_Institution :
Eindhoven University of Technology. Department of Electrical Engineering, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
Abstract :
In short channel MOSFETs the effects of series resistance become increasingly important. In this paper the limitations of two existing series resistance measurement methods [1,2] will be discussed. Because of their limitations a new measurement method will be presented for the determination of the gate voltage dependent series resistance. In addition a very useful numerical process and device simulation method to estimate the source (drain) series resistance under several bias conditions will be discussed.
Keywords :
DVD; Data mining; Electric resistance; Electrical resistance measurement; Intrusion detection; Length measurement; MOSFETs; Microelectronics; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
