Title :
Accurate and efficient small-signal modeling of active devices using artificial neural networks
Author :
Watson, P.M. ; Weatherspoon, M. ; Dunleavy, L. ; Creech, G.L.
Author_Institution :
Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
Abstract :
Artificial neural networks (ANNs) are presented for the accurate and efficient small-signal modeling of active devices. Models are developed using measured data and are valid over ranges of parameters such as frequency, bias, and ambient temperature. Once generated, these ANN models are inserted into commercial microwave circuit simulators where they can be used for computer-aided design (CAD) and optimization of microwave/MM-wave circuits. Also, the developed ANN models can give physical insight into device behavior and scaling properties when used in conjunction with an equivalent circuit approach. An advantage of the ANN modeling approach is that it provides substantial data storage reduction over previously used modeling techniques without loss of accuracy. With increased model accuracy, the potential of first-pass design success may be realized, resulting in cost savings and decreased time-to-market for new products.
Keywords :
Schottky gate field effect transistors; electronic engineering computing; microwave devices; millimetre wave devices; neural nets; semiconductor device models; ANN model; CAD; MM-wave circuits; active devices; artificial neural networks; commercial microwave circuit simulators; computer-aided design; data storage reduction; equivalent circuit; microwave circuits; optimization; scaling properties; small-signal modeling; Artificial neural networks; Circuit simulation; Computational modeling; Computer simulation; Design automation; Frequency measurement; Microwave circuits; Microwave devices; Microwave generation; Temperature distribution;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722636