Title :
A 5-GS/s 4-bit flash ADC with triode-load bias voltage trimming offset calibration in 65-nm CMOS
Author :
Junjie Yao ; Jin Liu
Author_Institution :
Guangzhou Runxin Inf. Tech. Co., Ltd., Guangzhou, China
Abstract :
A 5-GS/s 4-bit flash ADC is implemented in 65-nm CMOS. Offset calibration is achieved by digitally adjusting the bias voltages of the triode loads in the preamplifier without introducing additional capacitive loading in the analog path and degrading the high-speed performance. The ADC consumes 34.3 mW from a 1.2-V supply at 5 GS/s, and occupies 0.0828mm2 active area. The ADC achieves 3.93 ENOB with a 2.5-GHz ERBW and a 0.45-pJ/convstep FOM at 5 GS/s.
Keywords :
CMOS integrated circuits; UHF integrated circuits; analogue-digital conversion; field effect MMIC; preamplifiers; triodes; CMOS; capacitive loading; flash ADC; frequency 2.5 GHz; power 34.3 W; preamplifier; size 65 nm; triode load bias voltage trimming offset calibration; voltage 1.2 V; Accuracy; CMOS integrated circuits; CMOS technology; Calibration; Frequency measurement; Preamplifiers; Resistors;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2011 IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4577-0222-8
DOI :
10.1109/CICC.2011.6188616