Title :
A proposed lateral DDR IMPATT structure for better millimeter-wave optical interaction
Author :
Acharyya, Aritra ; Banerjee, J.P.
Author_Institution :
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
Abstract :
In this paper the authors have proposed a lateral double drift region (DDR) IMPATT structure which can be fabricated in standard complementary metal semiconductor oxide (CMOS) technology. Possible fabrication steps of p+pnn+ structured lateral IMPATT designed to operate at 94 GHz window frequency are described in standard 0.18 μm CMOS technology. A double-iterative computer method based on drift-diffusion model is used to study the high frequency properties of the designed lateral IMPATT device. The proposed structure provides better feasibility of optical control of RF performance of the device.
Keywords :
CMOS integrated circuits; IMPATT diodes; millimetre wave devices; CMOS technology; DDR IMPATT structure; complementary metal semiconductor oxide technology; double drift region; double-iterative computer method; millimeter-wave optical interaction; CMOS integrated circuits; CMOS technology; Doping; Microwave devices; Optical devices; Silicon;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1545-7
DOI :
10.1109/ICDCSyst.2012.6188640
