Title :
Borosilicate glass and its applications in bipolar technology
Author :
Bianco, M. ; Ehinger, K. ; Hautke, B. ; Klose, H. ; Philipsborn, H.v.
Author_Institution :
Siemens AG, Corporate Research, Otto-Hahn-Ring 6, 8000 Munich 83, FRG; Universitÿt Regensburg, NWF II, Physik, Universitÿtsstr. 31, 8400 Regensburg, FRG
Abstract :
Borosilicate glass (SiOB) and its outdiffusion properties were investigated. The outdiffusion of boron can be controlled by using an intermediate oxide layer. Borosilicate glass can be used to realize sub 100 nm base widths for bipolar transistors. By using SiOB instead of TEOS for the spacer of PSA transistors, the base link is improved.
Keywords :
Bipolar transistors; Boron; CMOS technology; Etching; Glass; Ion implantation; Microelectronics; Rapid thermal annealing; Silicon; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
