DocumentCode
1907298
Title
P-HEMTs for low-voltage portable applications using filled gate fabrication process
Author
Martinez, M.J. ; Schirmann, E. ; Durlam, M. ; Halchin, D. ; Burton, R. ; Huang, J.-H. ; Tehrani, S. ; Reyes, A. ; Green, D. ; Cody, N.
Author_Institution
Commun. Products Lab., Motorola Inc., Tempe, AZ, USA
fYear
1996
fDate
3-6 Nov. 1996
Firstpage
241
Lastpage
244
Abstract
A fundamental change in gate formation to a filled gate process was combined with changes in film deposition. The resulting p-HEMT manufacturing process gives much better performance for low-voltage RF amplification. At a drain voltage of 3.5 V, a 12-mm periphery device fabricated by this method is capable of 33 dBm output power with an associated power-added efficiency of greater than 75%.
Keywords
power HEMT; power amplifiers; radiofrequency amplifiers; semiconductor technology; 3.5 V; 75 percent; filled gate fabrication; film deposition; low-voltage RF amplifier; manufacturing process; p-HEMT; portable device; power-added efficiency; Batteries; Dielectric substrates; Fabrication; Gallium arsenide; HEMTs; Laboratories; Manufacturing processes; Passivation; Sputter etching; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location
Orlando, FL, USA
ISSN
1064-7775
Print_ISBN
0-7803-3504-X
Type
conf
DOI
10.1109/GAAS.1996.567878
Filename
567878
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