On the Temperature Dependence of Polysilicon Emitter Transistors

This paper investigates the ßf temperature behaviour of polysilicon emitter transistors with a view to understanding the device physics. Realigned polysilicon emitters are shown to behave as ideal single crystal transistors. Transistors with true polysilicon emitters exhibit a reduced temperature sensitivity of ßf. This is thought to result from a potential barrier at the interface. This potential barrier is dependent on the polysilicon doping level.