A self-aligned buried-channel heterostructure GaAs FET with high breakdown voltage for use in mobile communications systems

Author

Kitaura, Y. ; Nishihori, K. ; Tanabe, Y. ; Mihara, M. ; Yoshimura, M. ; Nitta, T. ; Kakiuchi, Y. ; Uchitomi, N.

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

245

Lastpage

248

Abstract

The combined process of epitaxy and ion implantation has been developed in the fabrication of a buried-channel WNx/W self-aligned heterostructure GaAs FET. This FET comprises an ion implanted channel and an undoped AlGaAs epitaxial surface layer. The ion-implantation technique leads to an IC-oriented process and the epitaxial technique to a buried channel structure. Both ease of isolation and enhanced breakdown voltage were attained, promising MMICs for L-band digital mobile communication systems.

Keywords

III-V semiconductors; gallium arsenide; ion implantation; isolation technology; junction gate field effect transistors; vapour phase epitaxial growth; GaAs; IC process; L-band digital mobile communication system; MMIC; WN-W; breakdown voltage; epitaxy; fabrication; ion implantation; isolation; self-aligned buried-channel heterostructure GaAs FET; Annealing; Epitaxial layers; FETs; Fabrication; Gallium arsenide; MESFETs; MMICs; Mobile communication; Radio frequency; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567879

Filename

567879