Title :
A self-aligned buried-channel heterostructure GaAs FET with high breakdown voltage for use in mobile communications systems
Author :
Kitaura, Y. ; Nishihori, K. ; Tanabe, Y. ; Mihara, M. ; Yoshimura, M. ; Nitta, T. ; Kakiuchi, Y. ; Uchitomi, N.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
The combined process of epitaxy and ion implantation has been developed in the fabrication of a buried-channel WNx/W self-aligned heterostructure GaAs FET. This FET comprises an ion implanted channel and an undoped AlGaAs epitaxial surface layer. The ion-implantation technique leads to an IC-oriented process and the epitaxial technique to a buried channel structure. Both ease of isolation and enhanced breakdown voltage were attained, promising MMICs for L-band digital mobile communication systems.
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; isolation technology; junction gate field effect transistors; vapour phase epitaxial growth; GaAs; IC process; L-band digital mobile communication system; MMIC; WN-W; breakdown voltage; epitaxy; fabrication; ion implantation; isolation; self-aligned buried-channel heterostructure GaAs FET; Annealing; Epitaxial layers; FETs; Fabrication; Gallium arsenide; MESFETs; MMICs; Mobile communication; Radio frequency; Switches;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567879
