Title :
Optimization of the high-frequency performance of the BASIC bipolar technology
Author :
Dekker, R. ; van Es, R. ; Jansen, S. ; Kranen, P. ; Maas, H. ; Pruijmboom, A. ; van der Velden, J.
Author_Institution :
Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands, Tel: +31 40 744255
Abstract :
The high-frequency performance of the BASIC bipolar technology has been improved by increasing the cutoff frequency and by a strong reduction of the base resistance. Furthermore, excellent analog performance, inherent to the BASIC device structure, has been maintained.
Keywords :
Annealing; Boron; Breakdown voltage; Cutoff frequency; Doping profiles; Etching; Laboratories; Linearity; Microelectronics; Transistors;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
