Title :
27 GHz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET-traveling wave amplifier
Author :
van Waasen, S. ; Umbach, A. ; Auer, U. ; Back, H.-G. ; Bertenburg, R.M. ; Mekonnen, G.G. ; Passenberg, Wolfgang ; Reuter, R. ; Schlaak, W. ; Schramm, C. ; Unterborsch, Gunter ; Wolfram, P. ; Tegude, F.J.
Author_Institution :
Dept. of Solid-State Electron, Gerhard-Mercator-Univ. Duisburg, Germany
Abstract :
An InP-based monolithic integrated photoreceiver with a bandwidth of 27 GHz is presented. The device consists of a waveguide fed pin-photodiode and a traveling wave amplifier with coplanar waveguides based on four InAlAs/InGaAs/InP-HFET. The integration concept, receiver design, fabrication process and characterization are shown. The presented concept offers a potential for bit rates in the 100 Gb/s range.
Keywords :
III-V semiconductors; aluminium compounds; coplanar waveguides; digital communication; field effect analogue integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical fibre communication; optical receivers; p-i-n photodiodes; 100 Gbit/s; 27 GHz; HFET-traveling wave amplifier; III-V semiconductors; InAlAs-InGaAs; bit rates; coplanar waveguides; fabrication process; integrated optoelectronic photoreceiver; optical fibre communication; pin-photodiode; receiver design; waveguide fed photodiode; Bandwidth; Bit rate; Circuits; Coplanar waveguides; HEMTs; Integrated optoelectronics; MODFETs; Optical amplifiers; Optical waveguides; Photodiodes;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567882
