Title :
Modeling and RF analysis of silicon inter-band tunnel diode with THz cut-off frequency
Author :
Kim, Kyung Rok ; Kang, In Man ; Dutton, Robert W.
Author_Institution :
Sch. of Electr. & Comput. Eng., Ulsan Nat. Inst. of Sci. & Technol., Ulsan, South Korea
Abstract :
We demonstrated RF analysis framework based on tunnel velocity model for Si IBT diodes with ultra-thin tunnel barriers. Microwave and sub-millimeter wave properties of the non-linear NDR characteristics have been investigated in a numerical way with various structural design. The intrinsic cut-off frequency can be obtained up to THz-level for highly doped nanoscale Si tunnel junctions.
Keywords :
microwave devices; semiconductor junctions; silicon; tunnel diodes; RF analysis; Si IBT diodes; THz cut-off frequency; microwave properties; nanoscale Si tunnel junction; nonlinear NDR characteristic; silicon interband tunnel diode; submillimeter wave properties; tunnel velocity model; ultra-thin tunnel barrier; Analytical models; Doping; Gain; Numerical models; Radio frequency; Silicon; Tunneling;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562553
