Title :
InGaP/GaAs HBT-IC chipset for 10-Gb/s optical receiver
Author :
Ihara, T. ; Oikawa, Y. ; Yamamoto, T. ; Tomofuji, H. ; Hamano, H. ; Ohnishik, H. ; Watanabe, Y.
Author_Institution :
Fujitsu Labs. Ltd., Kawasaki, Japan
Abstract :
We have developed an IC chipset for 10 Gb/s optical transmission systems using high-speed and reliable InGaP/GaAs HBTs. The amplifiers showed over 10 GHz bandwidth and the decision circuit showed a very small decision ambiguity of 6 mV at 10 Gb/s. Using these ICs, we achieved an optical receiver sensitivity of -19.6 dBm, and -36.2 dBm (Pe=10/sup -12/) with an optical preamplifier, for an STM-64 signal. The deviation of receiver sensitivity was within 1 dB over a wide temperature range of 0 to 85/spl deg/C.
Keywords :
III-V semiconductors; bipolar integrated circuits; decision circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical fibre communication; optical receivers; preamplifiers; 0 to 85 degC; 10 Gbit/s; HBT-IC chipset; III-V semiconductors; InGaP-GaAs; STM-64 signal; decision ambiguity; decision circuit; optical preamplifier; optical receiver; optical transmission systems; receiver sensitivity; sensitivity deviation; Bandwidth; Gallium arsenide; High speed integrated circuits; High speed optical techniques; Optical amplifiers; Optical receivers; Optical sensors; Photonic integrated circuits; Preamplifiers; Stimulated emission;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567883
